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APPLICATION OF PROTECTIVE ANTIREFLECTION COATING ON SEMICONDUCTOR HETEROSTRUCTURE IN THE UVА RANGE

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The possibility of applying a protective antireflective coating on semiconductor heterostructure surface in the UVА range is examined. It is shown that a specially prepared solution based on standard epoxy-54 EC makes it possible to obtain layers without a significant change in the volume (less than 1 %), as well as reduce losses of radiation generated by the semiconductor structure by 11 %.

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