The lateral capacitance of nanometer MNOSFET with a single charge trapped in oxide layer or at SiO2 - SI3N4 interfaceat
Аннотация:
In this work the dependence between the position of single charge trapped in an oxide layer or at SiO2 – Si3N4 interface and the concentration distribution of charge carriers on a semiconductor substrate surface of the nanometer n-channel Metal-Nitride-Oxide-Semiconductor Field Effect Transistor (MNOSFET) and p-channel MNOSFET with n+ drain area is studied. It is shown that the lateral capacitances of nanometer MNOSFET depend on the position of single charge in oxide or at interface. This dependence allows one to estimate the position of trapped charges along the channel of transistor.
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